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Power MOSFET, N-Channel, QFET®, 400 V, 3.0 A, 1.6 Ω, TO-220F, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH3999
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Newark | Mosfet, N-Ch, 400V, 3A, To-220F, Transistor Polarity:N Channel, Continuous Drain Current Id:3A, Drain Source Voltage Vds:400V, On Resistance Rds(On):1.27Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Dissipation Rohs Compliant: Yes |Onsemi FQPF5N40 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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Buy Now | |
DISTI #
FQPF5N40
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TME | Transistor: N-MOSFET, unipolar, 400V, 1.9A, Idm: 12A, 35W, TO220FP Min Qty: 1 | 0 |
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$0.6900 / $1.0400 | RFQ |
DISTI #
3003934
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element14 Asia-Pacific | MOSFET, N-CH, 400V, 3A, TO-220F RoHS: Compliant Min Qty: 1 Container: Each | 555 |
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$0.6965 / $1.6292 | Buy Now |
DISTI #
3003934
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Farnell | MOSFET, N-CH, 400V, 3A, TO-220F RoHS: Compliant Min Qty: 1 Lead time: 47 Weeks, 1 Days Container: Each | 555 |
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$0.6182 / $1.1327 | Buy Now |
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FQPF5N40
onsemi
Buy Now
Datasheet
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FQPF5N40
onsemi
Power MOSFET, N-Channel, QFET®, 400 V, 3.0 A, 1.6 Ω, TO-220F, 1000-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220F, 3 PIN | |
Manufacturer Package Code | 221AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 6 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 35 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQPF5N40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF5N40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFS720B | 3.3A, 400V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | FQPF5N40 vs IRFS720B |
IRFS720B | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | FQPF5N40 vs IRFS720B |