Part Details for FQPF70N10 by Fairchild Semiconductor Corporation
Overview of FQPF70N10 by Fairchild Semiconductor Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for FQPF70N10
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 100V N-CHANNEL MOSFET Power Field-Effect Transistor, 35A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 150 |
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RFQ |
Part Details for FQPF70N10
FQPF70N10 CAD Models
FQPF70N10 Part Data Attributes
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FQPF70N10
Fairchild Semiconductor Corporation
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Datasheet
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FQPF70N10
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 35A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220F | |
Package Description | TO-220F, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 1300 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 62 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQPF70N10
This table gives cross-reference parts and alternative options found for FQPF70N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF70N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STP80NF12FP | 80A, 120V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | FQPF70N10 vs STP80NF12FP |
2SK3587-01MR | Power Field-Effect Transistor, 73A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Fuji Electric Co Ltd | FQPF70N10 vs 2SK3587-01MR |
FS70KM-2 | Power Field-Effect Transistor, 70A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN | Mitsubishi Electric | FQPF70N10 vs FS70KM-2 |
SSS70N10A | Power Field-Effect Transistor, 28A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Samsung Semiconductor | FQPF70N10 vs SSS70N10A |