Datasheets
FQPF9N30 by:

Power Field-Effect Transistor, 6A I(D), 300V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

Part Details for FQPF9N30 by Fairchild Semiconductor Corporation

Overview of FQPF9N30 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FQPF9N30

Part # Distributor Description Stock Price Buy
Rochester Electronics 6A, 300V, 0.45ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 2342
  • 1 $0.7621
  • 25 $0.7469
  • 100 $0.7164
  • 500 $0.6859
  • 1,000 $0.6478
$0.6478 / $0.7621 Buy Now

Part Details for FQPF9N30

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FQPF9N30 Part Data Attributes

FQPF9N30 Fairchild Semiconductor Corporation
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FQPF9N30 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6A I(D), 300V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 420 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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