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Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223, SOT-223-4 / TO-261-4, 4000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y1563
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Newark | Mosfet, N Ch, 200V, 0.85A, Sot-223-3, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:850Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQT4N20LTF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
82C4372
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Newark | Transistor, mosfet, n-Channel,200V V(Br)Dss,850Ma I(D),sot-223 Rohs Compliant: Yes |Onsemi FQT4N20LTF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2680 / $0.3490 | Buy Now |
DISTI #
FQT4N20LTF
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Avnet Americas | Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.2440 / $0.2531 | Buy Now |
DISTI #
73928931
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RS | Transistor, N-channel, QFET MOSFET, 200V, 0.85A, 140 Ohm at VGS 10V, SOT-223 | ON Semiconductor FQT4N20LTF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
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$0.7600 / $0.8400 | RFQ |
DISTI #
FQT4N20LTF
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TME | Transistor: N-MOSFET, unipolar, 200V, 0.68A, 2.2W, SOT223 Min Qty: 1 | 3401 |
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$0.3360 / $0.7230 | Buy Now |
DISTI #
FQT4N20LTF
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 4000 | 0 |
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$0.2600 | Buy Now |
DISTI #
FQT4N20LTF
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Avnet Asia | Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 22 Weeks, 0 Days | 8000 |
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$0.2441 / $0.2730 | Buy Now |
DISTI #
FQT4N20LTF
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Avnet Silica | Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
C1S226600721086
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 15880 |
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$0.2500 / $0.8730 | Buy Now |
DISTI #
FQT4N20LTF
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EBV Elektronik | Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 24 Weeks, 0 Days | EBV - 28000 |
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Buy Now |
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FQT4N20LTF
onsemi
Buy Now
Datasheet
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Compare Parts:
FQT4N20LTF
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223, SOT-223-4 / TO-261-4, 4000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-223-4 / TO-261-4 | |
Manufacturer Package Code | 318H-01 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 52 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 0.85 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.2 W | |
Pulsed Drain Current-Max (IDM) | 3.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQT4N20LTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT4N20LTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFM210AL99Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQT4N20LTF vs IRFM210AL99Z |
IRFM210AD84Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQT4N20LTF vs IRFM210AD84Z |
IRFM210AS62Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQT4N20LTF vs IRFM210AS62Z |
FQT4N20L | onsemi | Check for Price | Power Field-Effect Transistor | FQT4N20LTF vs FQT4N20L |
FQT4N20LTF_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4 | FQT4N20LTF vs FQT4N20LTF_NL |
FQT4N20L99Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQT4N20LTF vs FQT4N20L99Z |
FQT4N20D84Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQT4N20LTF vs FQT4N20D84Z |