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Transistors / Power Field-Effect Transistors / FQT4N20LTF
Datasheets
FQT4N20LTF by:

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223, SOT-223-4 / TO-261-4, 4000-REEL

Part Details for FQT4N20LTF by onsemi

Results Overview of FQT4N20LTF by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

FQT4N20LTF Information

FQT4N20LTF by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQT4N20LTF

Part # Distributor Description Stock Price Buy
DISTI # 31Y1563
Newark Mosfet, N Ch, 200V, 0.85A, Sot-223-3, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:850Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQT4N20LTF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 82C4372
Newark Transistor, mosfet, n-Channel,200V V(Br)Dss,850Ma I(D),sot-223 Rohs Compliant: Yes |Onsemi FQT4N20LTF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.3490
  • 6,000 $0.3220
  • 12,000 $0.3010
  • 18,000 $0.2810
  • 30,000 $0.2680
$0.2680 / $0.3490 Buy Now
DISTI # FQT4N20LTF
Avnet Americas Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.2803
  • 8,000 $0.2788
  • 16,000 $0.2470
  • 24,000 $0.2459
  • 32,000 $0.2441
$0.2441 / $0.2803 Buy Now
DISTI # FQT4N20LTF
Avnet Americas Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.2531
  • 8,000 $0.2500
  • 16,000 $0.2480
  • 24,000 $0.2459
  • 32,000 $0.2440
$0.2440 / $0.2531 Buy Now
DISTI # FQT4N20LTF
Avnet Americas Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.2531
  • 8,000 $0.2500
  • 16,000 $0.2480
  • 24,000 $0.2459
  • 32,000 $0.2440
$0.2440 / $0.2531 Buy Now
DISTI # 73928931
RS Transistor, N-channel, QFET MOSFET, 200V, 0.85A, 140 Ohm at VGS 10V, SOT-223 | ON Semiconductor FQT4N20LTF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 0
  • 5 $0.8400
  • 100 $0.7900
  • 200 $0.7600
$0.7600 / $0.8400 RFQ
DISTI # FQT4N20LTF
TME Transistor: N-MOSFET, unipolar, 200V, 0.68A, 2.2W, SOT223 Min Qty: 1 3401
  • 1 $0.7060
  • 10 $0.5660
  • 25 $0.4770
  • 100 $0.4220
  • 250 $0.3790
  • 500 $0.3530
  • 1,000 $0.3280
$0.3280 / $0.7060 Buy Now
DISTI # FQT4N20LTF
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 4000 0
  • 4,000 $0.2600
$0.2600 Buy Now
DISTI # FQT4N20LTF
Avnet Asia Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days 8000
  • 4,000 $0.2730
  • 8,000 $0.2695
  • 12,000 $0.2660
  • 20,000 $0.2627
  • 40,000 $0.2562
  • 100,000 $0.2500
  • 200,000 $0.2441
$0.2441 / $0.2730 Buy Now
DISTI # FQT4N20LTF
Avnet Silica Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 17 Weeks, 0 Days Silica - 16000
Buy Now
DISTI # C1S226600721086
Chip One Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 15780
  • 5 $0.5590
  • 50 $0.4440
  • 100 $0.3460
  • 200 $0.3280
  • 500 $0.3070
  • 1,000 $0.2870
  • 2,000 $0.2670
  • 4,000 $0.2490
$0.2490 / $0.5590 Buy Now
DISTI # FQT4N20LTF
EBV Elektronik Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N20LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days EBV - 20000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 4000 16000
  • 4,000 $0.4903
  • 16,000 $0.4537
$0.4537 / $0.4903 Buy Now

Part Details for FQT4N20LTF

FQT4N20LTF CAD Models

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FQT4N20LTF Part Data Attributes

Parametric Data
FQT4N20LTF onsemi
Buy Now Datasheet
Compare Parts:
FQT4N20LTF onsemi Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223, SOT-223-4 / TO-261-4, 4000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOT-223-4 / TO-261-4
Manufacturer Package Code 318H-01
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 52 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.85 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.2 W
Pulsed Drain Current-Max (IDM) 3.4 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQT4N20LTF

This table gives cross-reference parts and alternative options found for FQT4N20LTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT4N20LTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQT4N20L onsemi Check for Price Power Field-Effect Transistor FQT4N20LTF vs FQT4N20L
SIHFL210TR-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN FQT4N20LTF vs SIHFL210TR-GE3
IRFL210TR Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 3 PIN FQT4N20LTF vs IRFL210TR
IRFL210TRPBF-BE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN FQT4N20LTF vs IRFL210TRPBF-BE3
IRFM220B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN FQT4N20LTF vs IRFM220B
IRFL210 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN FQT4N20LTF vs IRFL210
IRFL210TR International Rectifier Check for Price Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA FQT4N20LTF vs IRFL210TR
IRFL210TR Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 3 PIN FQT4N20LTF vs IRFL210TR
FQT4N20 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FQT4N20LTF vs FQT4N20

FQT4N20LTF Related Parts

FQT4N20LTF Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the FQT4N20LTF is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.

  • To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.

  • For optimal thermal performance, use a PCB with a thermal relief pattern and a heat sink with a thermal interface material. Ensure good thermal conductivity between the device and the heat sink. Also, keep the PCB layout compact and symmetrical to minimize thermal gradients.

  • To protect the FQT4N20LTF from ESD, use proper handling and storage procedures, such as using anti-static bags and wrist straps. Also, ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

  • The FQT4N20LTF has a typical lifespan of 10-15 years, depending on operating conditions. It's designed to meet the reliability requirements of automotive and industrial applications, with a failure rate of less than 10 FIT (failures per billion hours) at 125°C.

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