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P-Channel QFET® MOSFET -100V, -1.0A, 1.05Ω, SOT-223-4 / TO-261-4, 4000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15R3447
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Newark | P Channel Mosfet, -100V, 1A Sot-223, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQT5P10TF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3950 |
|
$0.3010 / $0.7700 | Buy Now |
DISTI #
27AC5850
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Newark | Qf -100V 1.05Ohm Sot223 Rohs Compliant: Yes |Onsemi FQT5P10TF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2590 / $0.2750 | Buy Now |
DISTI #
82C4377
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Newark | P Channel Mosfet, -100V, 1A Sot-223, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQT5P10TF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2570 / $0.2640 | Buy Now |
DISTI #
FQT5P10TF
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Avnet Americas | Power MOSFET, P Channel, 100 V, 1 A, 1.05 Ohm, SOT-223, 4 Pins, Surface Mount - Tape and Reel (Alt: FQT5P10TF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 15 Weeks, 0 Days Container: Reel | 800012517 Factory Stock |
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$0.2327 / $0.2764 | Buy Now |
DISTI #
15R3447
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Avnet Americas | Power MOSFET, P Channel, 100 V, 1 A, 1.05 Ohm, SOT-223, 4 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 15R3447) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 75 Weeks, 5 Days Container: Ammo Pack | 3950 Partner Stock |
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$0.4280 / $0.7700 | Buy Now |
DISTI #
FQT5P10TF
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Avnet Americas | Power MOSFET, P Channel, 100 V, 1 A, 1.05 Ohm, SOT-223, 4 Pins, Surface Mount - Tape and Reel (Alt: FQT5P10TF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 15 Weeks, 0 Days Container: Reel | 12517 Factory Stock |
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$0.2327 / $0.2764 | Buy Now |
DISTI #
FQT5P10TF
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Avnet Americas | Power MOSFET, P Channel, 100 V, 1 A, 1.05 Ohm, SOT-223, 4 Pins, Surface Mount - Tape and Reel (Alt: FQT5P10TF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel | 12517 Factory Stock |
|
$0.2326 / $0.2413 | Buy Now |
DISTI #
FQT5P10TF
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TME | Transistor: P-MOSFET, unipolar, -100V, -0.8A, 2W, SOT223 Min Qty: 1 | 0 |
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$0.3260 / $0.8070 | RFQ |
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NexGen Digital | 13 |
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RFQ | ||
DISTI #
FQT5P10TF
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 4000 | 0 |
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$0.2500 | Buy Now |
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|
FQT5P10TF
onsemi
Buy Now
Datasheet
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Compare Parts:
FQT5P10TF
onsemi
P-Channel QFET® MOSFET -100V, -1.0A, 1.05Ω, SOT-223-4 / TO-261-4, 4000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-223-4 / TO-261-4 | |
Manufacturer Package Code | 318H-01 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 55 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 1.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |