Datasheets
FQU17P06TU by:

Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, IPAK-3 / DPAK-3 STRAIGHT LEAD, 5040-TUBE

Part Details for FQU17P06TU by onsemi

Overview of FQU17P06TU by onsemi

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Applications Automotive

Price & Stock for FQU17P06TU

Part # Distributor Description Stock Price Buy
DISTI # 9846174
Farnell MOSFET, P, I-PAK RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 6314
  • 1 $1.0950
  • 10 $0.7058
  • 100 $0.5437
  • 500 $0.4722
  • 1,000 $0.4173
  • 5,000 $0.4161
$0.4161 / $1.0950 Buy Now
DISTI # FQU17P06TU
TME Transistor: P-MOSFET, unipolar, -60V, -7.6A, 44W, IPAK Min Qty: 1 77
  • 1 $0.8320
  • 5 $0.7610
  • 20 $0.6900
  • 70 $0.6280
  • 350 $0.5820
$0.5820 / $0.8320 Buy Now
New Advantage Corporation TO-251 3L (IPAK)P-CH/60V/12A/0.135OHM RoHS: Compliant Min Qty: 1 Package Multiple: 70 1260
  • 350 $0.7285
  • 1,260 $0.6741
$0.6741 / $0.7285 Buy Now

Part Details for FQU17P06TU

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FQU17P06TU Part Data Attributes

FQU17P06TU onsemi
Buy Now Datasheet
Compare Parts:
FQU17P06TU onsemi Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, IPAK-3 / DPAK-3 STRAIGHT LEAD, 5040-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code IPAK-3 / DPAK-3 STRAIGHT LEAD
Package Description IPAK-3
Manufacturer Package Code 369AR
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 44 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQU17P06TU

This table gives cross-reference parts and alternative options found for FQU17P06TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU17P06TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQU17P06TU Rochester Electronics LLC Check for Price 12A, 60V, 0.135ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 FQU17P06TU vs FQU17P06TU
FQU17P06 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 FQU17P06TU vs FQU17P06
FQU17P06TU Fairchild Semiconductor Corporation Check for Price P-Channel QFET® MOSFET -60V, -12A, 135mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL FQU17P06TU vs FQU17P06TU
FQU11P06TU Fairchild Semiconductor Corporation Check for Price P-Channel QFET® MOSFET -60V, -9.4A, 185mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL FQU17P06TU vs FQU11P06TU
STD10PF06-1 STMicroelectronics Check for Price 10A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 FQU17P06TU vs STD10PF06-1
FQU11P06 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 FQU17P06TU vs FQU11P06
FQU11P06TU onsemi $0.4633 Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK, IPAK-3 / DPAK-3 STRAIGHT LEAD, 5040-TUBE FQU17P06TU vs FQU11P06TU
SFU9024 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 FQU17P06TU vs SFU9024
FQU11P06TU Rochester Electronics LLC Check for Price 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 FQU17P06TU vs FQU11P06TU
SFU9024 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FQU17P06TU vs SFU9024

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