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Part Details for FQU2N60CTU by onsemi
Overview of FQU2N60CTU by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQU2N60CTU
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, 1.9A, 600V, 4.7ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 9 |
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$0.3942 / $0.4638 | Buy Now |
Part Details for FQU2N60CTU
FQU2N60CTU CAD Models
FQU2N60CTU Part Data Attributes
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FQU2N60CTU
onsemi
Buy Now
Datasheet
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FQU2N60CTU
onsemi
Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, IPAK, 5040-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | IPAK-3 | |
| Manufacturer Package Code | 369AR | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1.9 A | |
| Drain-source On Resistance-Max | 4.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 44 W | |
| Pulsed Drain Current-Max (IDM) | 7.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQU2N60CTU
This table gives cross-reference parts and alternative options found for FQU2N60CTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU2N60CTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQU2N60C | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | FQU2N60CTU vs FQU2N60C |
| FQU2N60CTU | N-Channel QFET® MOSFET 600V, 1.9A, 4.7Ω, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL | Fairchild Semiconductor Corporation | FQU2N60CTU vs FQU2N60CTU |
| FQU2N60CTU | 1.9A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, IPAK-3 | Rochester Electronics LLC | FQU2N60CTU vs FQU2N60CTU |