Datasheets
FQU6N40C by:

Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

Part Details for FQU6N40C by Fairchild Semiconductor Corporation

Overview of FQU6N40C by Fairchild Semiconductor Corporation

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Part Details for FQU6N40C

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FQU6N40C Part Data Attributes

FQU6N40C Fairchild Semiconductor Corporation
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FQU6N40C Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 270 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQU6N40C

This table gives cross-reference parts and alternative options found for FQU6N40C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU6N40C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFU330BTU 4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU6N40C vs IRFU330BTU
IRFU330B Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU6N40C vs IRFU330B
IRFU330BTU Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU6N40C vs IRFU330BTU
Part Number Description Manufacturer Compare
IRFU330BTU Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU6N40C vs IRFU330BTU
IRFU330B Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU6N40C vs IRFU330B
IRFU330BTU 4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU6N40C vs IRFU330BTU

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