Part Details for FS100R12KT4GB11BOSA1 by Infineon Technologies AG
Overview of FS100R12KT4GB11BOSA1 by Infineon Technologies AG
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Price & Stock for FS100R12KT4GB11BOSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FS100R12KT4GB11BOSA1-ND
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DigiKey | IGBT MOD 1200V 100A 515W Min Qty: 2 Lead time: 16 Weeks Container: Bulk MARKETPLACE PRODUCT |
2 In Stock |
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$163.5300 | Buy Now |
DISTI #
448-FS100R12KT4GB11BOSA1-ND
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DigiKey | IGBT MOD 1200V 100A 515W Min Qty: 2 Lead time: 16 Weeks Container: Tray | Limited Supply - Call |
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$152.0750 | Buy Now |
Part Details for FS100R12KT4GB11BOSA1
FS100R12KT4GB11BOSA1 CAD Models
FS100R12KT4GB11BOSA1 Part Data Attributes
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FS100R12KT4GB11BOSA1
Infineon Technologies AG
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Datasheet
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FS100R12KT4GB11BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MODULE-35 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
JESD-30 Code | R-XUFM-X35 | |
Number of Elements | 6 | |
Number of Terminals | 35 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 570 ns | |
Turn-on Time-Nom (ton) | 165 ns |