Datasheets
FS100R12PT4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel, MODULE-20

Part Details for FS100R12PT4 by Infineon Technologies AG

Overview of FS100R12PT4 by Infineon Technologies AG

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Price & Stock for FS100R12PT4

Part # Distributor Description Stock Price Buy
DISTI # 84R7213
Newark Igbt Module, Dc Collector Current:100A, Collector Emitter Saturation Voltage Vce(On):1.2Kv, Power Dissipation Pd:500W, Junction Temperature, Tj Max:150°C, Igbt Termination:Press Fit, Collector Emitter Voltage V(Br)Ceo:1.2Kv Rohs Compliant: Yes |Infineon FS100R12PT4 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 726-FS100R12PT4
Mouser Electronics IGBT Modules 3 PHASE POWER BRIDGE RoHS: Compliant 6
  • 1 $210.8600
  • 12 $202.5400
  • 30 $187.6900
$187.6900 / $210.8600 Buy Now
Rochester Electronics FS100R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 1832
  • 1 $128.2100
  • 25 $125.6400
  • 100 $120.5100
  • 500 $115.3900
  • 1,000 $108.9800
$108.9800 / $128.2100 Buy Now

Part Details for FS100R12PT4

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FS100R12PT4 Part Data Attributes:

FS100R12PT4 Infineon Technologies AG
Buy Now Datasheet
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FS100R12PT4 Infineon Technologies AG Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel, MODULE-20
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-20
Pin Count 20
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 135 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X13
Moisture Sensitivity Level 1
Number of Elements 6
Number of Terminals 13
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 190 ns
VCEsat-Max 2.15 V

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