Datasheets
FS100R12W2T7B11BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for FS100R12W2T7B11BOMA1 by Infineon Technologies AG

Overview of FS100R12W2T7B11BOMA1 by Infineon Technologies AG

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Price & Stock for FS100R12W2T7B11BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 94AC1382
Newark Igbt Module, 1.2Kv, Transistor Polarity:-, Dc Collector Current:-, Collector Emitter Saturation Voltage Vce(On):-, Power Dissipation Pd:-, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Style:Module, No. Of Pins:-, Rohs Compliant: Yes |Infineon FS100R12W2T7B11BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 19
  • 1 $95.2800
  • 5 $91.1500
  • 10 $87.0000
  • 30 $85.0000
  • 60 $82.9900
  • 105 $81.1600
$81.1600 / $95.2800 Buy Now
DISTI # 448-FS100R12W2T7B11BOMA1-ND
DigiKey IGBT MOD 1200V 100A 20MW EASY Min Qty: 1 Lead time: 26 Weeks Container: Tray Temporarily Out of Stock
  • 1 $91.6400
  • 15 $83.6627
  • 30 $79.8193
  • 90 $75.6806
$75.6806 / $91.6400 Buy Now
DISTI # FS100R12W2T7B11BOMA1
Avnet Americas Transistor IGBT Module N-CH 1.2kV 70A ±20V Screw Tray - Trays (Alt: FS100R12W2T7B11BOMA1) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 15 $90.7370
$90.7370 Buy Now
DISTI # 726-FS100R12W2T7B11B
Mouser Electronics IGBT Modules EASY STANDARD RoHS: Compliant 32
  • 1 $92.9800
  • 10 $85.3400
  • 30 $81.4200
  • 60 $75.6800
$75.6800 / $92.9800 Buy Now
Rochester Electronics FS100R12W2T7_B11 - IGBT module 1200 V, 100 A RoHS: Compliant Status: Active Min Qty: 1 15
  • 1 $85.3700
  • 25 $83.6600
  • 100 $80.2500
  • 500 $76.8300
  • 1,000 $72.5700
$72.5700 / $85.3700 Buy Now
DISTI # FS100R12W2T7B11BOMA1
Avnet Americas Transistor IGBT Module N-CH 1.2kV 70A ±20V Screw Tray - Trays (Alt: FS100R12W2T7B11BOMA1) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 15 $90.7370
$90.7370 Buy Now
DISTI # FS100R12W2T7B11
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $99.4600
  • 3 $87.8600
$87.8600 / $99.4600 RFQ
DISTI # FS100R12W2T7B11BOMA1
Avnet Americas Transistor IGBT Module N-CH 1.2kV 70A ±20V Screw Tray - Trays (Alt: FS100R12W2T7B11BOMA1) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 15 $90.7370
$90.7370 Buy Now
DISTI # SP001656864
EBV Elektronik Transistor IGBT Module N-CH 1.2kV 70A �20V Screw Tray (Alt: SP001656864) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 3 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 2986959
element14 Asia-Pacific IGBT MODULE, 1.2KV RoHS: Compliant Min Qty: 1 Container: Each 19
  • 1 $96.2331
  • 5 $90.0266
  • 10 $83.8128
  • 50 $79.4793
$79.4793 / $96.2331 Buy Now
DISTI # 2986959
Farnell IGBT MODULE, 1.2KV RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 19
  • 1 $91.8572
  • 5 $85.9281
  • 10 $79.9990
  • 50 $76.2886
$76.2886 / $91.8572 Buy Now

Part Details for FS100R12W2T7B11BOMA1

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FS100R12W2T7B11BOMA1 Part Data Attributes

FS100R12W2T7B11BOMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FS100R12W2T7B11BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 60 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 70 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 6.45 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X33
Number of Elements 6
Number of Terminals 33
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 655 ns
Turn-on Time-Nom (ton) 221 ns

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