Part Details for FS150R12KT4B9BOSA1 by Infineon Technologies AG
Overview of FS150R12KT4B9BOSA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FS150R12KT4B9BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
43AC3138
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Newark | Igbt Module, N-Ch, 1.2Kv, 150A, Transistor Polarity:N Channel, Dc Collector Current:150A, Collector Emitter Saturation Voltage Vce(On):1.75V, Power Dissipation Pd:750W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FS150R12KT4B9BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$215.2700 / $234.9900 | Buy Now |
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DISTI #
448-FS150R12KT4B9BOSA1-ND
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DigiKey | IGBT MOD 1200V 150A 750W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
11 In Stock |
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$215.6260 / $239.2100 | Buy Now |
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DISTI #
FS150R12KT4B9BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 150A ±20V Screw Tray - Trays (Alt: FS150R12KT4B9BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$258.5245 | Buy Now |
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DISTI #
75723986
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Verical | Diode Module with Chopper-IGBT Min Qty: 1 Package Multiple: 1 Date Code: 2317 | Americas - 7 |
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$273.7500 / $288.7500 | Buy Now |
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Rochester Electronics | FS150R12 - Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: Active Min Qty: 1 | 1 |
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$206.7500 / $243.2400 | Buy Now |
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DISTI #
FS150R12KT4B9BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 150A ±20V Screw Tray - Trays (Alt: FS150R12KT4B9BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$258.5245 | Buy Now |
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Ameya Holding Limited | IGBT MODULE VCES 650V 150A | 1 |
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RFQ | |
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DISTI #
C1S322001058748
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Chip1Stop | IGBT Modules RoHS: Compliant Container: Tray | 7 |
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$219.0000 / $231.0000 | Buy Now |
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DISTI #
SP000862502
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EBV Elektronik | Transistor IGBT Module N-CH 1.2kV 150A �20V Screw Tray (Alt: SP000862502) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2803385
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$278.1022 / $285.1589 | Buy Now |
Part Details for FS150R12KT4B9BOSA1
FS150R12KT4B9BOSA1 CAD Models
FS150R12KT4B9BOSA1 Part Data Attributes:
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FS150R12KT4B9BOSA1
Infineon Technologies AG
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Datasheet
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FS150R12KT4B9BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-33
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-33 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X33 | |
| Number of Elements | 6 | |
| Number of Terminals | 33 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 525 ns | |
| Turn-on Time-Nom (ton) | 196 ns |