Datasheets
FS150R17PE4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-20

Part Details for FS150R17PE4BOSA1 by Infineon Technologies AG

Overview of FS150R17PE4BOSA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FS150R17PE4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1535
Newark Igbt, Module, N-Ch, 1.7Kv, 150A, Transistor Polarity:N Channel, Dc Collector Current:150A, Collector Emitter Saturation Voltage Vce(On):1.95V, Power Dissipation Pd:835W, Collector Emitter Voltage V(Br)Ceo:1.7Kv, Transistor Case Rohs Compliant: Yes |Infineon FS150R17PE4BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $267.4900
  • 5 $263.6700
  • 10 $259.8500
  • 25 $244.5700
$244.5700 / $267.4900 Buy Now
DISTI # 448-FS150R17PE4BOSA1-ND
DigiKey IGBT MOD 1700V 150A 835W Min Qty: 1 Lead time: 20 Weeks Container: Tray 6
In Stock
  • 1 $245.5600
  • 12 $230.0000
  • 30 $221.3533
$221.3533 / $245.5600 Buy Now
DISTI # FS150R17PE4BOSA1
Avnet Americas MEDIUM POWER ECONO - Trays (Alt: FS150R17PE4BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 6 $265.3910
$265.3910 Buy Now
Rochester Electronics FS150R17P - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 3
  • 1 $249.7000
  • 25 $244.7000
  • 100 $234.7100
  • 500 $224.7300
  • 1,000 $212.2400
$212.2400 / $249.7000 Buy Now
DISTI # FS150R17PE4BOSA1
Avnet Americas MEDIUM POWER ECONO - Trays (Alt: FS150R17PE4BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 6 $265.3910
$265.3910 Buy Now
DISTI # FS150R17PE4
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $317.2800
  • 3 $279.8900
  • 6 $252.1200
$252.1200 / $317.2800 RFQ
Ameya Holding Limited IGBT MODULE VCES 650V 150A 134
RFQ
DISTI # FS150R17PE4BOSA1
Avnet Americas MEDIUM POWER ECONO - Trays (Alt: FS150R17PE4BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 6 $265.3910
$265.3910 Buy Now
ComSIT USA IGBT-MODULE Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel RoHS: Not Compliant Europe - 4
RFQ
DISTI # SP000631454
EBV Elektronik Trans IGBT Module N-CH 1.7KV 150A 20-pin ECONO4-1 (Alt: SP000631454) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 2781254
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $311.6469
  • 5 $273.7414
$273.7414 / $311.6469 Buy Now
DISTI # 2781254
Farnell IGBT, MODULE, N-CH, 1.7KV, 150A RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $223.1730
  • 5 $219.1144
$219.1144 / $223.1730 Buy Now

Part Details for FS150R17PE4BOSA1

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FS150R17PE4BOSA1 Part Data Attributes

FS150R17PE4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FS150R17PE4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-20
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X13
Pin Count 20
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1700 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X13
Number of Elements 6
Number of Terminals 13
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1240 ns
Turn-on Time-Nom (ton) 280 ns

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