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Part Details for FS200R12PT4 by Infineon Technologies AG
Overview of FS200R12PT4 by Infineon Technologies AG
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Price & Stock for FS200R12PT4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
84R7216
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Newark | Igbt Module, Continuous Collector Current:200A, Collector Emitter Saturation Voltage:2.15V, Power Dissipation:1Kw, Operating Temperature Max:150°C, Igbt Termination:Stud, Collector Emitter Voltage Max:1.2Kv, Transistor Mounting:Panelrohs Compliant: Yes |Infineon FS200R12PT4 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
641-FS200R12PT4
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Mouser Electronics | IGBT Modules EconoPACK4 200A 1200V RoHS: Compliant | 3 |
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$228.0300 / $252.9800 | Buy Now |
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DISTI #
1833585
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$211.8431 / $234.9885 | Buy Now |
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DISTI #
1833585
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Farnell | IGBT, POW, QUAD W NTC, 1200V, 200A RoHS: Compliant Min Qty: 6 Lead time: 51 Weeks, 1 Days Container: Each | 0 |
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$258.3998 | Buy Now |
Part Details for FS200R12PT4
FS200R12PT4 CAD Models
FS200R12PT4 Part Data Attributes
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FS200R12PT4
Infineon Technologies AG
Buy Now
Datasheet
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FS200R12PT4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-20
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X20 | |
| Pin Count | 20 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 280 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X20 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 6 | |
| Number of Terminals | 20 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1000 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 600 ns | |
| Turn-on Time-Nom (ton) | 190 ns | |
| VCEsat-Max | 2.15 V |