Datasheets
FS200R12PT4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-20

Part Details for FS200R12PT4BOSA1 by Infineon Technologies AG

Overview of FS200R12PT4BOSA1 by Infineon Technologies AG

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Price & Stock for FS200R12PT4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 51AH7929
Newark Igbt Mod, 6 N-Ch, 1.2Kv, 280A, 1Kw Rohs Compliant: Yes |Infineon FS200R12PT4BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 6
  • 1 $285.9400
  • 5 $279.9000
  • 12 $273.8500
  • 30 $267.8100
$267.8100 / $285.9400 Buy Now
DISTI # 448-FS200R12PT4BOSA1-ND
DigiKey IGBT MOD 1200V 280A 1000W Min Qty: 1 Lead time: 20 Weeks Container: Tray 24
In Stock
  • 1 $252.9800
  • 12 $236.9450
  • 30 $228.0370
$228.0370 / $252.9800 Buy Now
DISTI # FS200R12PT4BOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 280A ±20V Screw Tray - Trays (Alt: FS200R12PT4BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 6 $273.4045
$273.4045 Buy Now
Future Electronics IGBT Modules 200A 1200V EconoPACK4 RoHS: Compliant pbFree: Yes Min Qty: 6 Package Multiple: 6 Container: Tray 0
Tray
  • 6 $297.5800
  • 12 $294.4300
  • 18 $291.3100
$291.3100 / $297.5800 Buy Now
Future Electronics IGBT Modules 200A 1200V EconoPACK4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $223.9500
  • 3 $220.4500
  • 5 $218.8400
  • 10 $216.6700
  • 20 $213.2900
$213.2900 / $223.9500 Buy Now
Future Electronics IGBT Modules 200A 1200V EconoPACK4 RoHS: Compliant pbFree: Yes Min Qty: 6 Package Multiple: 6 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $305.8800
  • 2 $300.1600
  • 3 $291.3100
$291.3100 / $305.8800 Buy Now
Rochester Electronics FS200R12 - Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: Active Min Qty: 1 1
  • 1 $257.2400
  • 25 $252.0900
  • 100 $241.8000
  • 500 $231.5100
  • 1,000 $218.6500
$218.6500 / $257.2400 Buy Now
DISTI # FS200R12PT4BOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 280A ±20V Screw Tray - Trays (Alt: FS200R12PT4BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 6 $273.4045
$273.4045 Buy Now
Ameya Holding Limited   Min Qty: 2 4
  • 2 $342.2288
  • 3 $335.4008
  • 4 $328.6805
  • 5 $322.1037
$322.1037 / $342.2288 Buy Now
DISTI # FS200R12PT4BOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 280A ±20V Screw Tray - Trays (Alt: FS200R12PT4BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 6 $273.4045
$273.4045 Buy Now
DISTI # SP000485586
EBV Elektronik Transistor IGBT Module N-CH 1200V 280A �20V Screw Tray (Alt: SP000485586) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 3294636
element14 Asia-Pacific IGBT MOD, 6 N-CH, 1.2KV, 280A, 1KW RoHS: Compliant Min Qty: 1 Container: Each 6
  • 1 $260.1078
  • 5 $234.4992
$234.4992 / $260.1078 Buy Now
DISTI # 3294636
Farnell IGBT MOD, 6 N-CH, 1.2KV, 280A, 1KW RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 6
  • 1 $220.8585
$220.8585 Buy Now

Part Details for FS200R12PT4BOSA1

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FS200R12PT4BOSA1 Part Data Attributes

FS200R12PT4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FS200R12PT4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-20
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X20
Pin Count 20
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 280 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X20
Number of Elements 6
Number of Terminals 20
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 190 ns

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