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Insulated Gate Bipolar Transistor
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FS225R12OE4
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Mouser Electronics | IGBT Modules 1200 V, 225 A sixpack IGBT module RoHS: Compliant | 2 |
|
$279.6100 / $310.1600 | Buy Now |
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FS225R12OE4
Infineon Technologies AG
Buy Now
Datasheet
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FS225R12OE4
Infineon Technologies AG
Insulated Gate Bipolar Transistor
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 350 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X29 | |
Number of Elements | 6 | |
Number of Terminals | 29 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1250 W | |
Reference Standard | UL APPROVED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 570 ns | |
Turn-on Time-Nom (ton) | 230 ns | |
VCEsat-Max | 2.15 V |