Part Details for FS225R17OE4BOSA1 by Infineon Technologies AG
Overview of FS225R17OE4BOSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
Price & Stock for FS225R17OE4BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
448-FS225R17OE4BOSA1-ND
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DigiKey | IGBT MOD 1700V 350A 1450W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
3 In Stock |
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$401.1100 | Buy Now |
|
DISTI #
FS225R17OE4BOSA1
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Avnet Americas | Trans IGBT Module N-CH 1.7KV 350A 29-Pin ECONOPP - Trays (Alt: FS225R17OE4BOSA1) RoHS: Compliant Min Qty: 4 Package Multiple: 4 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$497.3795 | Buy Now |
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Rochester Electronics | FS225R17 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 | 202 |
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$397.7700 / $467.9600 | Buy Now |
|
DISTI #
SP000690912
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EBV Elektronik | Trans IGBT Module N-CH 1.7KV 350A 29-Pin ECONOPP (Alt: SP000690912) RoHS: Compliant Min Qty: 4 Package Multiple: 4 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FS225R17OE4BOSA1
FS225R17OE4BOSA1 CAD Models
FS225R17OE4BOSA1 Part Data Attributes
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FS225R17OE4BOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FS225R17OE4BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 350 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X29 | |
| Number of Elements | 6 | |
| Number of Terminals | 29 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1450 W | |
| Reference Standard | UL APPROVED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 870 ns | |
| Turn-on Time-Nom (ton) | 310 ns | |
| VCEsat-Max | 2.3 V |