Part Details for FS25R12W1T7_B11 by Infineon Technologies AG
Overview of FS25R12W1T7_B11 by Infineon Technologies AG
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for FS25R12W1T7_B11
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IGBT2762
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Rutronik | SIXPA.IGBT-MOD 1200V 25A EASY1B RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tray |
Stock DE - 1 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$29.1300 / $34.1200 | Buy Now |
Part Details for FS25R12W1T7_B11
FS25R12W1T7_B11 CAD Models
FS25R12W1T7_B11 Part Data Attributes
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FS25R12W1T7_B11
Infineon Technologies AG
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Datasheet
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FS25R12W1T7_B11
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.45 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X15 | |
| Number of Elements | 6 | |
| Number of Terminals | 15 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-61140 | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 380 ns | |
| Turn-on Time-Nom (ton) | 56 ns |