Datasheets
FS450R12OE4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor

Part Details for FS450R12OE4 by Infineon Technologies AG

Overview of FS450R12OE4 by Infineon Technologies AG

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Price & Stock for FS450R12OE4

Part # Distributor Description Stock Price Buy
DISTI # 641-FS450R12OE4
Mouser Electronics IGBT Modules IGBT Module 450A 1200V RoHS: Compliant 11
  • 1 $598.0200
  • 12 $505.2500
$505.2500 / $598.0200 Buy Now

Part Details for FS450R12OE4

FS450R12OE4 CAD Models

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FS450R12OE4 Part Data Attributes:

FS450R12OE4 Infineon Technologies AG
Buy Now Datasheet
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FS450R12OE4 Infineon Technologies AG Insulated Gate Bipolar Transistor
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 660 A
Collector-Emitter Voltage-Max 1200 V
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X29
Number of Elements 6
Number of Terminals 29
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2250 W
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 680 ns
Turn-on Time-Nom (ton) 290 ns
VCEsat-Max 2.1 V

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