Part Details for FS75R12KE3GBOSA1 by Infineon Technologies AG
Overview of FS75R12KE3GBOSA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FS75R12KE3GBOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34AC1544
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Newark | Igbt, Module, N-Ch, 650V, 150A, Transistor Polarity:N Channel, Dc Collector Current:100A, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:355W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FS75R12KE3GBOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 35 |
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$149.1000 / $159.1900 | Buy Now |
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DISTI #
FS75R12KE3GBOSA1-ND
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DigiKey | IGBT MOD 1200V 100A 355W Min Qty: 1 Lead time: 16 Weeks Container: Tray | Temporarily Out of Stock |
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$164.1080 / $182.0600 | Buy Now |
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DISTI #
FS75R12KE3GBOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 100A ±20V Screw Tray - Trays (Alt: FS75R12KE3GBOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$196.7570 | Buy Now |
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DISTI #
75724316
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Verical | Trans IGBT Module N-CH 1200V 100A 355W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2346 | Americas - 10 |
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$156.2500 | Buy Now |
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Rochester Electronics | FSXR12K3G - LOW POWER ECONO RoHS: Compliant Status: Active Min Qty: 1 | 11 |
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$157.3500 / $185.1200 | Buy Now |
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DISTI #
FS75R12KE3GBOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 100A ±20V Screw Tray - Trays (Alt: FS75R12KE3GBOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$196.7570 | Buy Now |
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Chip1Cloud | IGBT MOD 1200V 100A 355W | 2610 |
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RFQ | |
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DISTI #
SP000100418
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EBV Elektronik | Transistor IGBT Module N-CH 1200V 100A �20V Screw Tray (Alt: SP000100418) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2781264
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element14 Asia-Pacific | IGBT, MODULE, N-CH, 650V, 150A RoHS: Compliant Min Qty: 1 Container: Each | 35 |
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$151.2661 / $162.7736 | Buy Now |
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DISTI #
2781264
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Farnell | IGBT, MODULE, N-CH, 650V, 150A RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Each | 35 |
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$138.9557 / $153.8943 | Buy Now |
Part Details for FS75R12KE3GBOSA1
FS75R12KE3GBOSA1 CAD Models
FS75R12KE3GBOSA1 Part Data Attributes:
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FS75R12KE3GBOSA1
Infineon Technologies AG
Buy Now
Datasheet
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FS75R12KE3GBOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-35 | |
| Pin Count | 35 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| JESD-30 Code | R-XUFM-X35 | |
| Number of Elements | 6 | |
| Number of Terminals | 35 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 610 ns | |
| Turn-on Time-Nom (ton) | 340 ns |