Datasheets
FSJ260R4 by:

Power Field-Effect Transistor, 44A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

Part Details for FSJ260R4 by Harris Semiconductor

Overview of FSJ260R4 by Harris Semiconductor

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Applications Automotive

Price & Stock for FSJ260R4

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-254AA 4
  • 1 $65.0000
$65.0000 Buy Now

Part Details for FSJ260R4

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FSJ260R4 Part Data Attributes

FSJ260R4 Harris Semiconductor
Buy Now Datasheet
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FSJ260R4 Harris Semiconductor Power Field-Effect Transistor, 44A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature RADIATION HARDENED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 192 W
Pulsed Drain Current-Max (IDM) 132 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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