Part Details for FSX017X by SUMITOMO ELECTRIC Device Innovations Inc
Results Overview of FSX017X by SUMITOMO ELECTRIC Device Innovations Inc
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FSX017X Information
FSX017X by SUMITOMO ELECTRIC Device Innovations Inc is an RF Small Signal Field-Effect Transistor.
RF Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FSX017X
FSX017X CAD Models
FSX017X Part Data Attributes
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FSX017X
SUMITOMO ELECTRIC Device Innovations Inc
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Datasheet
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FSX017X
SUMITOMO ELECTRIC Device Innovations Inc
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | EUDYNA DEVICES INC | |
Part Package Code | DIE | |
Package Description | UNCASED CHIP, R-XUUC-N4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 12 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | X BAND | |
JESD-30 Code | R-XUUC-N4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |