-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel, MODULE-9
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
641-FZ3600R17HP4
|
Mouser Electronics | IGBT Modules IGBT 1700V 3600A RoHS: Compliant | 8 |
|
$1,348.7200 | Buy Now |
DISTI #
SP000989572
|
EBV Elektronik | Trans IGBT Module N-CH 1.7KV 3.6KA 9-Pin (Alt: SP000989572) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FZ3600R17HP4
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FZ3600R17HP4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel, MODULE-9
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-9 | |
Pin Count | 9 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 3600 A | |
Collector-Emitter Voltage-Max | 1700 V | |
Configuration | COMPLEX | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 3 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 21000 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 2095 ns | |
Turn-on Time-Nom (ton) | 1075 ns | |
VCEsat-Max | 2.25 V |