Part Details for FZ3600R17HP4B2BOSA2 by Infineon Technologies AG
Overview of FZ3600R17HP4B2BOSA2 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FZ3600R17HP4B2BOSA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
49AC0230
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Newark | Igbt Mod, 1.7Kv, 3.6Ka, 19.5Kw, Continuous Collector Current:3.6Ka, Collector Emitter Saturation Voltage:1.9V, Power Dissipation:19.5Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Infineon FZ3600R17HP4B2BOSA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$2,352.7600 | Buy Now |
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DISTI #
448-FZ3600R17HP4B2BOSA2-ND
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DigiKey | IGBT MODULE 1700V 3600A Min Qty: 1 Lead time: 20 Weeks Container: Tray |
3 In Stock |
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$1,673.8600 | Buy Now |
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DISTI #
FZ3600R17HP4B2BOSA2
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Avnet Americas | IGBTs - Trays (Alt: FZ3600R17HP4B2BOSA2) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$2,022.6725 | Buy Now |
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DISTI #
FZ3600R17HP4B2BOSA2
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Avnet Americas | IGBTs - Trays (Alt: FZ3600R17HP4B2BOSA2) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$2,022.6725 | Buy Now |
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DISTI #
FZ3600R17HP4B2BOSA2
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Avnet Americas | IGBTs - Trays (Alt: FZ3600R17HP4B2BOSA2) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$2,022.6725 | Buy Now |
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Ameya Holding Limited | 1 |
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RFQ | ||
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DISTI #
FZ3600R17HP4B2BOSA2
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Avnet Americas | IGBTs - Trays (Alt: FZ3600R17HP4B2BOSA2) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$2,022.6725 | Buy Now |
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DISTI #
FZ3600R17HP4B2BOSA2
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Avnet Americas | IGBTs - Trays (Alt: FZ3600R17HP4B2BOSA2) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$2,022.6725 | Buy Now |
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DISTI #
SP001052028
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EBV Elektronik | IGBTs (Alt: SP001052028) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2839520
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element14 Asia-Pacific | IGBT, MODULE, N-CH, 1.7KV, 3.6KA RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$1,776.7063 | Buy Now |
Part Details for FZ3600R17HP4B2BOSA2
FZ3600R17HP4B2BOSA2 CAD Models
FZ3600R17HP4B2BOSA2 Part Data Attributes
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FZ3600R17HP4B2BOSA2
Infineon Technologies AG
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Datasheet
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FZ3600R17HP4B2BOSA2
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Moisture Sensitivity Level | 1 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 19500 W | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 2095 ns | |
| Turn-on Time-Nom (ton) | 945 ns | |
| VCEsat-Max | 2.25 V |
Alternate Parts for FZ3600R17HP4B2BOSA2
This table gives cross-reference parts and alternative options found for FZ3600R17HP4B2BOSA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FZ3600R17HP4B2BOSA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FZ3600R17KE3 | Insulated Gate Bipolar Transistor, 4800A I(C), 1700V V(BR)CES, N-Channel, MODULE-9 | Infineon Technologies AG | FZ3600R17HP4B2BOSA2 vs FZ3600R17KE3 |
| FZ3600R17KE3B2NOSA1 | Insulated Gate Bipolar Transistor, | Infineon Technologies AG | FZ3600R17HP4B2BOSA2 vs FZ3600R17KE3B2NOSA1 |
| FZ3600R17KE3NOSA1 | Insulated Gate Bipolar Transistor, 4800A I(C), 1700V V(BR)CES, N-Channel, MODULE-9 | Infineon Technologies AG | FZ3600R17HP4B2BOSA2 vs FZ3600R17KE3NOSA1 |