FZ3600R17HP4HOSA2
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9

Overview of FZ3600R17HP4HOSA2 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 5 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for FZ3600R17HP4HOSA2 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 38AJ3610
Newark Igbt Module, 1.7Kv, 3.6Ka, 21Kw, Stud Rohs Compliant: Yes |Infineon FZ3600R17HP4HOSA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $1,913.9100
$1,913.9100 Buy Now
DISTI # 448-FZ3600R17HP4HOSA2-ND
DigiKey IGBT MODULE 1700V 3600A Min Qty: 1 Lead time: 14 Weeks Container: Tray Temporarily Out of Stock
  • 1 $1,314.5000
$1,314.5000 Buy Now
DISTI # FZ3600R17HP4HOSA2
Avnet Americas Trans IGBT Module N-CH 1700V 3600A 9-Pin IHMB190-2 - Trays (Alt: FZ3600R17HP4HOSA2) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Tray 0
RFQ
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks 0
  • 1 $1,402.1400
$1,402.1400 Buy Now
DISTI # SP001172096
EBV Elektronik Trans IGBT Module N-CH 1700V 3600A 9-Pin IHMB190-2 (Alt: SP001172096) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for FZ3600R17HP4HOSA2 by Infineon Technologies AG
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Part Data Attributes for FZ3600R17HP4HOSA2 by Infineon Technologies AG

FZ3600R17HP4HOSA2
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-XUFM-X3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
14 Weeks
Case Connection
ISOLATED
Collector-Emitter Voltage-Max
1700 V
Configuration
COMPLEX
JESD-30 Code
R-XUFM-X3
Moisture Sensitivity Level
1
Number of Elements
3
Number of Terminals
3
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
2095 ns
Turn-on Time-Nom (ton)
1075 ns
Want to compare parts?
  1. FZ3600R17HP4HOSA2
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9
    VS

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