Part Details for FZ900R12KE4 by Infineon Technologies AG
Overview of FZ900R12KE4 by Infineon Technologies AG
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for FZ900R12KE4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FZ900R12KE4
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Mouser Electronics | IGBT Modules 1200V 900A RoHS: Compliant | 3 |
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$181.2500 / $184.1200 | Buy Now |
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DISTI #
IGBT2033
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Rutronik | 1-Switch 1200V 900A 62mm RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Box |
Stock DE - 10 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$155.8400 / $182.5100 | Buy Now |
Part Details for FZ900R12KE4
FZ900R12KE4 CAD Models
FZ900R12KE4 Part Data Attributes
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FZ900R12KE4
Infineon Technologies AG
Buy Now
Datasheet
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FZ900R12KE4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 900 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 4300 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 810 ns | |
| Turn-on Time-Nom (ton) | 370 ns | |
| VCEsat-Max | 2.1 V |