Datasheets
GA04JT17-247 by: GeneSic Semiconductor Inc

Power Field-Effect Transistor,

Part Details for GA04JT17-247 by GeneSic Semiconductor Inc

Overview of GA04JT17-247 by GeneSic Semiconductor Inc

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Applications Space Technology Industrial Automation Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for GA04JT17-247

Part # Distributor Description Stock Price Buy
DISTI # 46W2772
Newark Sic Super Junction Transistor, To-247Ab, Gate Source Breakdown Voltage Max:-, Zero Gate Voltage Drain Current Max:10µa, Gate Source Cutoff Voltage Max:-, No. Of Pins:3 Pin, Operating Temperature Max:175°C, Channel Type:N Channel Rohs Compliant: Yes |Genesic Semiconductor GA04JT17-247 RoHS: Compliant Min Qty: 630 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
NAC Silicon Carbide (SiC) Junction Transistor 1700V180m? TO-247-3 RoHS: Compliant Min Qty: 630 Package Multiple: 30 0
RFQ

Part Details for GA04JT17-247

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GA04JT17-247 Part Data Attributes

GA04JT17-247 GeneSic Semiconductor Inc
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GA04JT17-247 GeneSic Semiconductor Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer GENESIC SEMICONDUCTOR INC
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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