Datasheets
GA100TS60SFPBF by: Vishay Intertechnologies

Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, INT-A-PAK-7

Part Details for GA100TS60SFPBF by Vishay Intertechnologies

Overview of GA100TS60SFPBF by Vishay Intertechnologies

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Applications Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for GA100TS60SFPBF

Part # Distributor Description Stock Price Buy
DISTI # VS-GA100TS60SFPBF
Avnet Americas Trans IGBT Module N-CH 600V 220A 7-Pin INT-A-PAK - Bulk (Alt: VS-GA100TS60SFPBF) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Container: Bulk 0
RFQ
DISTI # VS-GA100TS60SFPBF
Avnet Americas Trans IGBT Module N-CH 600V 220A 7-Pin INT-A-PAK - Bulk (Alt: VS-GA100TS60SFPBF) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Container: Bulk 0
RFQ

Part Details for GA100TS60SFPBF

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GA100TS60SFPBF Part Data Attributes:

GA100TS60SFPBF Vishay Intertechnologies
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GA100TS60SFPBF Vishay Intertechnologies Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, INT-A-PAK-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, INT-A-PAK-7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection ISOLATED
Collector Current-Max (IC) 220 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 780 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 1.28 V

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