Part Details for GA100TS60SFPBF by Vishay Intertechnologies
Overview of GA100TS60SFPBF by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
Price & Stock for GA100TS60SFPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
VS-GA100TS60SFPBF
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Avnet Americas | Trans IGBT Module N-CH 600V 220A 7-Pin INT-A-PAK - Bulk (Alt: VS-GA100TS60SFPBF) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Container: Bulk | 0 |
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RFQ | |
DISTI #
VS-GA100TS60SFPBF
|
Avnet Americas | Trans IGBT Module N-CH 600V 220A 7-Pin INT-A-PAK - Bulk (Alt: VS-GA100TS60SFPBF) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Container: Bulk | 0 |
|
RFQ |
Part Details for GA100TS60SFPBF
GA100TS60SFPBF CAD Models
GA100TS60SFPBF Part Data Attributes:
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GA100TS60SFPBF
Vishay Intertechnologies
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Datasheet
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GA100TS60SFPBF
Vishay Intertechnologies
Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, INT-A-PAK-7
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, INT-A-PAK-7 | |
Pin Count | 7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 220 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 780 W | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 1.28 V |