Datasheets
GA35XCP12-247 by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel

Part Details for GA35XCP12-247 by GeneSic Semiconductor Inc

Overview of GA35XCP12-247 by GeneSic Semiconductor Inc

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Applications Automotive

Price & Stock for GA35XCP12-247

Part # Distributor Description Stock Price Buy
NAC SIC IGBT CoPak- 50V/12A RoHS: Compliant Min Qty: 30 Package Multiple: 30 0
RFQ

Part Details for GA35XCP12-247

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GA35XCP12-247 Part Data Attributes

GA35XCP12-247 GeneSic Semiconductor Inc
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GA35XCP12-247 GeneSic Semiconductor Inc Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer GENESIC SEMICONDUCTOR INC
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Surface Mount NO

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