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Transistors / Power Field-Effect Transistors / GAN041-650WSBQ
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GAN041-650WSBQ by: Nexperia

Part Details for GAN041-650WSBQ by Nexperia

Overview of GAN041-650WSBQ by Nexperia

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Price & Stock for GAN041-650WSBQ

Part # Distributor Description Stock Price Buy
DISTI # 45AJ4080
Newark Gan Transistor, 650V, 47.2A, To-247, Drain Source Voltage Vds:650V, Continuous Drain Current Id:47.2A, Typical Gate Charge:22Nc, Transistor Mounting:Through Hole, No. Of Pins:3Pins, Product Range:-, Qualification:- Rohs Compliant: Yes |Nexperia GAN041-650WSBQ Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 403
  • 1 $9.0700
  • 10 $9.0700
  • 25 $9.0700
  • 60 $9.0700
  • 120 $9.0700
  • 270 $9.0700
$9.0700 Buy Now
DISTI # 1727-GAN041-650WSBQ-ND
DigiKey GAN041-650WSB/SOT429/TO-247 Min Qty: 1 Lead time: 8 Weeks Container: Tube 281
In Stock
  • 1 $18.0300
  • 10 $15.8820
  • 300 $13.3067
  • 600 $12.4482
$12.4482 / $18.0300 Buy Now
DISTI # GAN041-650WSBQ
Avnet Americas Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount - Trays (Alt: GAN041-650WSBQ) Min Qty: 300 Package Multiple: 300 Lead time: 53 Weeks, 1 Days Container: Tray 0
  • 300 $7.8548
  • 600 $7.6396
  • 1,200 $7.4244
  • 1,800 $7.2092
  • 2,400 $6.9940
  • 3,000 $6.7788
  • 30,000 $6.5636
$6.5636 / $7.8548 Buy Now
DISTI # 771-GAN041-650WSBQ
Mouser Electronics MOSFET GAN041-650WSB/SOT429/TO-247 RoHS: Compliant 197
  • 1 $16.6900
  • 10 $15.0700
  • 25 $14.3100
  • 30 $14.3100
  • 50 $13.6500
  • 100 $13.1200
  • 250 $13.0500
  • 500 $12.4400
$12.4400 / $16.6900 Buy Now
Future Electronics 650 V 35 mOhm Through Hole N-Channel Gallium Nitride (GaN) FET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $12.4400
  • 60 $12.3700
  • 90 $12.3300
  • 120 $12.3000
  • 150 $12.2000
$12.2000 / $12.4400 Buy Now
Future Electronics 650 V 35 mOhm Through Hole N-Channel Gallium Nitride (GaN) FET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $12.4400
  • 60 $12.3700
  • 90 $12.3300
  • 120 $12.3000
  • 150 $12.2000
$12.2000 / $12.4400 Buy Now
Future Electronics 650 V 35 mOhm Through Hole N-Channel Gallium Nitride (GaN) FET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $12.5000
  • 90 $12.4000
  • 150 $12.3600
  • 300 $12.3000
  • 600 $12.2000
$12.2000 / $12.5000 Buy Now
Rochester Electronics GAN041-650WSB - 650 V, 35 mOhm Gallium Nitride (GaN) RoHS: Compliant Status: Active Min Qty: 1 540
  • 1 $7.0600
  • 25 $6.9200
  • 100 $6.6400
  • 500 $6.3600
  • 1,000 $6.0000
$6.0000 / $7.0600 Buy Now
DISTI # GAN041-650WSBQ
TTI MOSFET GAN041-650WSB/SOT429/TO-247 pbFree: Pb-Free Min Qty: 1 Package Multiple: 1 Container: Box Americas - 289
In Stock
  • 1 $13.0800
  • 10 $12.2600
  • 25 $11.6300
  • 50 $10.7700
  • 100 $10.5600
  • 250 $10.3500
$10.3500 / $13.0800 Buy Now
DISTI # GAN041-650WSBQ
Avnet Americas Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount - Trays (Alt: GAN041-650WSBQ) Min Qty: 300 Package Multiple: 300 Lead time: 53 Weeks, 1 Days Container: Tray 0
  • 300 $7.8548
  • 600 $7.6396
  • 1,200 $7.4244
  • 1,800 $7.2092
  • 2,400 $6.9940
  • 3,000 $6.7788
  • 30,000 $6.5636
$6.5636 / $7.8548 Buy Now
DISTI # GAN041-650WSBQ
TME Transistor: N-JFET/N-MOSFET, GaN, unipolar, HEMT,cascode, 650V Min Qty: 1 21
  • 1 $21.5900
  • 3 $19.3300
  • 10 $17.0800
  • 30 $15.4700
$15.4700 / $21.5900 Buy Now
DISTI # GAN041-650WSBQ
Avnet Americas Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount - Trays (Alt: GAN041-650WSBQ) Min Qty: 300 Package Multiple: 300 Lead time: 53 Weeks, 1 Days Container: Tray 0
  • 300 $7.8548
  • 600 $7.6396
  • 1,200 $7.4244
  • 1,800 $7.2092
  • 2,400 $6.9940
  • 3,000 $6.7788
  • 30,000 $6.5636
$6.5636 / $7.8548 Buy Now
DISTI # GAN041-650WSBQ
Avnet Asia Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount (Alt: GAN041-650WSBQ) RoHS: Compliant Min Qty: 300 Package Multiple: 300 Lead time: 8 Weeks, 0 Days 1500
  • 300 $7.6857
  • 600 $7.1733
  • 900 $6.9870
  • 1,500 $6.8101
  • 3,000 $6.6420
  • 7,500 $6.4819
  • 15,000 $6.3294
$6.3294 / $7.6857 Buy Now
DISTI # GAN041-650WSBQ
Avnet Silica Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount (Alt: GAN041-650WSBQ) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 1 Weeks, 3 Days Silica - 270
Buy Now
CHIPMALL.COM LIMITED Package/EnclosureTO-247-3 fet typeN-Channel Operating temperature-55C~175C Gate voltage Vgs20V Drain-source voltage Vds650V 21840
  • 30 $14.8673
$14.8673 Buy Now
DISTI # GAN041-650WSBQ
EBV Elektronik Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount (Alt: GAN041-650WSBQ) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 1 Weeks, 3 Days EBV - 300
Buy Now
DISTI # 3759053
element14 Asia-Pacific TRANSISTOR, GAN, 650V, 47.2A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 323
  • 1 $18.2227
  • 5 $16.9227
  • 10 $15.6226
  • 50 $14.7633
  • 100 $13.8892
  • 250 $13.4485
$13.4485 / $18.2227 Buy Now
DISTI # 3759053
Farnell TRANSISTOR, GAN, 650V, 47.2A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 9 Weeks, 1 Days Container: Each 323
  • 1 $17.6870
  • 5 $16.3082
  • 10 $14.9168
  • 50 $14.0769
  • 100 $13.2621
  • 250 $12.8359
$12.8359 / $17.6870 Buy Now

Part Details for GAN041-650WSBQ

GAN041-650WSBQ CAD Models

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GAN041-650WSBQ Part Data Attributes

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GAN041-650WSBQ Nexperia
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GAN041-650WSBQ Nexperia
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