Datasheets
GB100XCP12-227 by:

Insulated Gate Bipolar Transistor,

Part Details for GB100XCP12-227 by GeneSic Semiconductor Inc

Overview of GB100XCP12-227 by GeneSic Semiconductor Inc

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Applications Computing and Data Storage

Price & Stock for GB100XCP12-227

Part # Distributor Description Stock Price Buy
DISTI # 46W2775
Newark Sic Igbt Copak-1200V-100A Sot-227, Continuous Collector Current:100A, Collector Emitter Saturation Voltage:1.2Kv, Power Dissipation:-, Operating Temperature Max:150°C, Igbt Termination:Stud, Collector Emitter Voltage Max:- Rohs Compliant: Yes |Genesic Semiconductor GB100XCP12-227 Min Qty: 150 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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NAC SIC IGBT CoPak- 50V/12A RoHS: Compliant Min Qty: 150 Package Multiple: 10 0
RFQ

Part Details for GB100XCP12-227

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GB100XCP12-227 Part Data Attributes:

GB100XCP12-227 GeneSic Semiconductor Inc
Buy Now Datasheet
Compare Parts:
GB100XCP12-227 GeneSic Semiconductor Inc Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer GENESIC SEMICONDUCTOR INC
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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