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Power Field-Effect Transistor, 11A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
499-GS-065-011-1-LTR
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Mouser Electronics | MOSFET 650V, 11A, GaN E-mode, 5x6 PDFN, Bottom-side cooled RoHS: Compliant | 3302 |
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$2.4400 / $5.0200 | Buy Now |
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GS-065-011-1-L-TR
GaN Systems
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Datasheet
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GS-065-011-1-L-TR
GaN Systems
Power Field-Effect Transistor, 11A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | GAN SYSTEMS INC | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | GaN Systems | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | HIGH ELECTRON MOBILITY | |
Feedback Cap-Max (Crss) | 0.4 pF | |
JESD-30 Code | R-PDSO-N8 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 19 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | GALLIUM NITRIDE |