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Part Details for GS66508B-TR by GaN Systems
Overview of GS66508B-TR by GaN Systems
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Price & Stock for GS66508B-TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
499-GS66508B-TR
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Mouser Electronics | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Bottom-side cooled RoHS: Compliant | 1331 |
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$13.6600 / $21.0800 | Buy Now |
Part Details for GS66508B-TR
GS66508B-TR CAD Models
GS66508B-TR Part Data Attributes
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GS66508B-TR
GaN Systems
Buy Now
Datasheet
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GS66508B-TR
GaN Systems
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | GAN SYSTEMS INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | GaN Systems | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.063 Ω | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Feedback Cap-Max (Crss) | 1.5 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | R-XBCC-N4 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | Gold (Au) - with Nickel (Ni) barrier | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |