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Part Details for GS66516T-TR by GaN Systems
Overview of GS66516T-TR by GaN Systems
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for GS66516T-TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
499-GS66516T-TR
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Mouser Electronics | MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooled RoHS: Compliant | 2527 |
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$25.8200 / $37.3500 | Buy Now |
Part Details for GS66516T-TR
GS66516T-TR CAD Models
GS66516T-TR Part Data Attributes
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GS66516T-TR
GaN Systems
Buy Now
Datasheet
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GS66516T-TR
GaN Systems
Power Field-Effect Transistor, 650V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | GAN SYSTEMS INC | |
| Package Description | ROHS COMPLIANT PACKAGE-4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | GaN Systems | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Feedback Cap-Max (Crss) | 5.9 pF | |
| JESD-30 Code | R-PDSO-N4 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Finish | GOLD OVER NICKEL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |