Part Details for GT50J325 by Toshiba America Electronic Components
Overview of GT50J325 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for GT50J325
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
24M2387
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Newark | Igbt, 600V, To-3P(Lh), Continuous Collector Current:50A, Collector Emitter Saturation Voltage:2.45V, Power Dissipation:240W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Toshiba GT50J325 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for GT50J325
GT50J325 CAD Models
GT50J325 Part Data Attributes
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GT50J325
Toshiba America Electronic Components
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Datasheet
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GT50J325
Toshiba America Electronic Components
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 240 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 430 ns | |
| Turn-on Time-Nom (ton) | 240 ns |