There are no models available for this part yet.
Overview of H7N0608AB by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| H7N0608AB-E | Renesas Electronics Corporation | Nch Single Power Mosfet 60V 70A 8Mohm To-220Ab |
Price & Stock for H7N0608AB by Renesas Electronics Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
H7N0608AB
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Avnet Silica | (Alt: H7N0608AB) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
CAD Models for H7N0608AB by Renesas Electronics Corporation
Part Data Attributes for H7N0608AB by Renesas Electronics Corporation
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|---|---|
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Part Life Cycle Code
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Not Recommended
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Ihs Manufacturer
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RENESAS ELECTRONICS CORP
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Part Package Code
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TO-220AB
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Package Description
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FLANGE MOUNT, R-PSFM-T3
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Pin Count
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3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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60 V
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Drain Current-Max (ID)
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70 A
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Drain-source On Resistance-Max
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0.012 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-220AB
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JESD-30 Code
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R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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80 W
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Pulsed Drain Current-Max (IDM)
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280 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for H7N0608AB
This table gives cross-reference parts and alternative options found for H7N0608AB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H7N0608AB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT4040BN | Power Field-Effect Transistor, 16A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Advanced Power Technology | H7N0608AB vs APT4040BN |
| PHP44N06T | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | H7N0608AB vs PHP44N06T |
| PHP193NQ06T,127 | PHP193NQ06T | NXP Semiconductors | H7N0608AB vs PHP193NQ06T,127 |
| BUK9504-40A,127 | N-channel TrenchMOS logic level FET@en-us TO-220 3-Pin | Nexperia | H7N0608AB vs BUK9504-40A,127 |
| BUK545-60H | TRANSISTOR 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | H7N0608AB vs BUK545-60H |
| PHP65N06LT127 | TRANSISTOR 63 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | H7N0608AB vs PHP65N06LT127 |
| IRF9642 | Power Field-Effect Transistor, 9A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | H7N0608AB vs IRF9642 |
| PHP42N03LT | TRANSISTOR 42 A, 30 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | H7N0608AB vs PHP42N03LT |
| APT5025BN | Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | H7N0608AB vs APT5025BN |
| PHW13N40E | TRANSISTOR 13.7 A, 400 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power | NXP Semiconductors | H7N0608AB vs PHW13N40E |