Part Details for HAT2160H-EL-E by Renesas Electronics Corporation
Overview of HAT2160H-EL-E by Renesas Electronics Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Industrial Automation
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for HAT2160H-EL-E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
HAT2160H-EL-ECT-ND
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DigiKey | MOSFET N-CH 20V 60A LFPAK Min Qty: 1 Lead time: 36 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$2.8000 | Buy Now |
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Bristol Electronics | 2057 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 20V, 0.0041OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 587 |
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$0.8520 / $2.1300 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 20V, 0.0041OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 400 |
|
$0.8520 / $2.1300 | Buy Now |
Part Details for HAT2160H-EL-E
HAT2160H-EL-E CAD Models
HAT2160H-EL-E Part Data Attributes:
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HAT2160H-EL-E
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
HAT2160H-EL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 20V 60A 2.6Mohm Lfpak, LFPAK, /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
| Part Package Code | LFPAK | |
| Package Description | SC-100, LFPAK-5 | |
| Pin Count | 5 | |
| Manufacturer Package Code | PTZZ0005DA | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |