Part Details for HAT2165H-EL-E by Renesas Electronics Corporation
Overview of HAT2165H-EL-E by Renesas Electronics Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HAT2165H-EL-E
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 2500Reel |
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$1.9100 | Buy Now |
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Bristol Electronics | 3769 |
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RFQ | ||
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Quest Components | 55A, 30V, 0.0053OHM, N-CHANNEL, SI, POWER, MOSFET | 797 |
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$2.3636 / $4.2975 | Buy Now |
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Quest Components | 55A, 30V, 0.0053OHM, N-CHANNEL, SI, POWER, MOSFET | 96 |
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$2.6501 / $4.2975 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 30V 55A LFPAK | 28401 |
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RFQ | |
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NexGen Digital | 74 |
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RFQ | ||
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DISTI #
HAT2165H-EL-E
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Avnet Asia | Trans MOSFET N-CH 30V 55A 5-Pin(4+Tab) LFPAK T/R (Alt: HAT2165H-EL-E) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | 5000 |
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RFQ | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 5000 |
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$2.5500 / $2.7300 | Buy Now |
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Sense Electronic Company Limited | LFPAK | 2000 |
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RFQ | |
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Win Source Electronics | Trans MOSFET N-CH Si 30V 55A 5-Pin(4+Tab) LFPAK T/R / MOSFET N-CH 30V 55A LFPAK | 20000 |
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$0.6600 / $0.9900 | Buy Now |
Part Details for HAT2165H-EL-E
HAT2165H-EL-E CAD Models
HAT2165H-EL-E Part Data Attributes
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HAT2165H-EL-E
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
HAT2165H-EL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak, LFPAK, /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | LFPAK | |
| Package Description | SC-100, LFPAK-5 | |
| Pin Count | 5 | |
| Manufacturer Package Code | PTZZ0005DA | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.0053 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HAT2165H-EL-E
This table gives cross-reference parts and alternative options found for HAT2165H-EL-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT2165H-EL-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS7288N3 | Power Field-Effect Transistor, 20A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | HAT2165H-EL-E vs FDS7288N3 |
| BSC094N03SG | Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H-EL-E vs BSC094N03SG |
| STL50NH3LL | 13A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 | STMicroelectronics | HAT2165H-EL-E vs STL50NH3LL |
| BSC025N03LSG | Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H-EL-E vs BSC025N03LSG |
| BSC014N03LSG | Power Field-Effect Transistor, 34A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H-EL-E vs BSC014N03LSG |
| BSC027N03SG | Power Field-Effect Transistor, 25A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H-EL-E vs BSC027N03SG |
| BSC0909NS | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H-EL-E vs BSC0909NS |
| STSJ100NH3LL | 100A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SO-8 | STMicroelectronics | HAT2165H-EL-E vs STSJ100NH3LL |
| BSC020N03LSG | Power Field-Effect Transistor, 28A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H-EL-E vs BSC020N03LSG |
| FDS7082N3 | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | HAT2165H-EL-E vs FDS7082N3 |