Part Details for HAT2169H-EL-E by Renesas Electronics Corporation
Overview of HAT2169H-EL-E by Renesas Electronics Corporation
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- Number of FFF Equivalents:
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Price & Stock for HAT2169H-EL-E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
HAT2169H-EL-ECT-ND
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DigiKey | MOSFET N-CH 40V 50A LFPAK Lead time: 36 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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Buy Now | |
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Bristol Electronics | 17917 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.006OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1207 |
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$3.6006 / $7.2012 | Buy Now |
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DISTI #
SMC-HAT2169H-EL-E
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 10000 |
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RFQ | |
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DISTI #
HAT2169H-EL-E
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Avnet Asia | Trans MOSFET N-CH 40V 50A 5-Pin(4+Tab) LFPAK T/R (Alt: HAT2169H-EL-E) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
HAT2169H-EL-E
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Avnet Silica | Trans MOSFET N-CH 40V 50A 5-Pin(4+Tab) LFPAK T/R (Alt: HAT2169H-EL-E) RoHS: Compliant Min Qty: 7500 Package Multiple: 7500 Lead time: 4 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Win Source Electronics | Trans MOSFET N-CH Si 40V 50A 5-Pin(4+Tab) LFPAK T/R / MOSFET N-CH 40V 50A LFPAK | 13600 |
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$6.5950 / $9.8920 | Buy Now |
Part Details for HAT2169H-EL-E
HAT2169H-EL-E CAD Models
HAT2169H-EL-E Part Data Attributes
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HAT2169H-EL-E
Renesas Electronics Corporation
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Datasheet
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HAT2169H-EL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 40V 50A 3.5Mohm Lfpak, LFPAK, /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
| Part Package Code | LFPAK | |
| Package Description | SC-100, LFPAK-5 | |
| Pin Count | 5 | |
| Manufacturer Package Code | PTZZ0005DA | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |