There are no models available for this part yet.
Overview of HAT2183WP-EL-E by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
HAT2183WP-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 150V 20A 64Mohm Wpak |
Price & Stock for HAT2183WP-EL-E by Renesas Electronics Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 14627 |
|
RFQ | ||||
Quest Components | 11701 |
|
$1.7100 / $3.4200 | Buy Now |
CAD Models for HAT2183WP-EL-E by Renesas Electronics Corporation
Part Data Attributes for HAT2183WP-EL-E by Renesas Electronics Corporation
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
|
Part Package Code
|
WPAK
|
Package Description
|
SMALL OUTLINE, R-XDSO-N8
|
Pin Count
|
8
|
Manufacturer Package Code
|
PWSN0008DA
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Renesas Electronics
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
150 V
|
Drain Current-Max (ID)
|
20 A
|
Drain-source On Resistance-Max
|
0.064 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-XDSO-N8
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
8
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
UNSPECIFIED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
30 W
|
Pulsed Drain Current-Max (IDM)
|
40 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
20
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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