Part Details for HAT2279H-EL-E by Renesas Electronics Corporation
Results Overview of HAT2279H-EL-E by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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HAT2279H-EL-E Information
HAT2279H-EL-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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HAT2279H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 80V 30A 12Mohm Lfpak |
Price & Stock for HAT2279H-EL-E
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
HAT2279H-EL-E
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Avnet Silica | Trans MOSFET N-CH 80V 30A 5-Pin(4+Tab) LFPAK T/R (Alt: HAT2279H-EL-E) RoHS: Compliant Min Qty: 17500 Package Multiple: 17500 Lead time: 28 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 80V 30A 5LFPAK | 12301 |
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$1.8840 / $2.8260 | Buy Now |
Part Details for HAT2279H-EL-E
HAT2279H-EL-E CAD Models
HAT2279H-EL-E Part Data Attributes
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HAT2279H-EL-E
Renesas Electronics Corporation
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Datasheet
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HAT2279H-EL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 80V 30A 12Mohm Lfpak, LFPAK, /Embossed Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | LFPAK | |
Package Description | FLANGE MOUNT, R-PSFM-G4 | |
Pin Count | 5 | |
Manufacturer Package Code | PTZZ0005DA | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Renesas Electronics | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-G4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |