Datasheets
HAT2279H-EL-E by: Renesas Electronics Corporation

Nch Single Power Mosfet 80V 30A 12Mohm Lfpak, LFPAK, /Embossed Tape

Part Details for HAT2279H-EL-E by Renesas Electronics Corporation

Results Overview of HAT2279H-EL-E by Renesas Electronics Corporation

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Applications Energy and Power Systems Renewable Energy Automotive

HAT2279H-EL-E Information

HAT2279H-EL-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
HAT2279H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 80V 30A 12Mohm Lfpak

Price & Stock for HAT2279H-EL-E

Part # Distributor Description Stock Price Buy
DISTI # HAT2279H-EL-E
Avnet Silica Trans MOSFET N-CH 80V 30A 5-Pin(4+Tab) LFPAK T/R (Alt: HAT2279H-EL-E) RoHS: Compliant Min Qty: 17500 Package Multiple: 17500 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now
Win Source Electronics MOSFET N-CH 80V 30A 5LFPAK 12301
  • 18 $2.8260
  • 44 $2.3190
  • 67 $2.2470
  • 92 $2.1740
  • 119 $2.1020
  • 160 $1.8840
$1.8840 / $2.8260 Buy Now

Part Details for HAT2279H-EL-E

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HAT2279H-EL-E Part Data Attributes

HAT2279H-EL-E Renesas Electronics Corporation
Buy Now Datasheet
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HAT2279H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 80V 30A 12Mohm Lfpak, LFPAK, /Embossed Tape
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code LFPAK
Package Description FLANGE MOUNT, R-PSFM-G4
Pin Count 5
Manufacturer Package Code PTZZ0005DA
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Renesas Electronics
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-G4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

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