Part Details for HGT1S12N60C3DS by Harris Semiconductor
Overview of HGT1S12N60C3DS by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for HGT1S12N60C3DS
HGT1S12N60C3DS CAD Models
HGT1S12N60C3DS Part Data Attributes
|
HGT1S12N60C3DS
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
HGT1S12N60C3DS
Harris Semiconductor
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN
|
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 24 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 275 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 480 ns | |
Turn-on Time-Nom (ton) | 48 ns |