Part Details for HGT1S15N120C3S by Harris Semiconductor
Overview of HGT1S15N120C3S by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGT1S15N120C3S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGT1S15N120C3S-ND
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DigiKey | 35A, 1200V, N-CHANNEL IGBT Min Qty: 75 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
695 In Stock |
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$4.0200 | Buy Now |
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Rochester Electronics | 35A, 1200V, UFS SERIES N-Channel IGBT RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 695 |
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$3.4500 / $4.0600 | Buy Now |
Part Details for HGT1S15N120C3S
HGT1S15N120C3S CAD Models
HGT1S15N120C3S Part Data Attributes
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HGT1S15N120C3S
Harris Semiconductor
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Datasheet
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HGT1S15N120C3S
Harris Semiconductor
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 35 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 400 ns | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 164 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 820 ns | |
| Turn-on Time-Nom (ton) | 42 ns |
Alternate Parts for HGT1S15N120C3S
This table gives cross-reference parts and alternative options found for HGT1S15N120C3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S15N120C3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | HGT1S15N120C3S vs SGP13N60UF |
| HGTP12N60A4 | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN | Fairchild Semiconductor Corporation | HGT1S15N120C3S vs HGTP12N60A4 |
| HGT1S12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel | Harris Semiconductor | HGT1S15N120C3S vs HGT1S12N60C3DR |
| HGTP12N60C3 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Fairchild Semiconductor Corporation | HGT1S15N120C3S vs HGTP12N60C3 |
| HGT1S3N60C3D | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA | Harris Semiconductor | HGT1S15N120C3S vs HGT1S3N60C3D |
| HGTG20N100D2 | Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247 | Harris Semiconductor | HGT1S15N120C3S vs HGTG20N100D2 |
| HGT1S12N60A4DS9A | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB | Fairchild Semiconductor Corporation | HGT1S15N120C3S vs HGT1S12N60A4DS9A |
| IRG4PC30W | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | HGT1S15N120C3S vs IRG4PC30W |
| IRG4PC30KDPBF | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | HGT1S15N120C3S vs IRG4PC30KDPBF |
| FGH40N6S2D | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | HGT1S15N120C3S vs FGH40N6S2D |