Datasheets
HGT1S20N60C3S9A by:

45A, 600V, UFS Series N-Channel IGBT, 800-REEL

Part Details for HGT1S20N60C3S9A by onsemi

Overview of HGT1S20N60C3S9A by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HGT1S20N60C3S9A

Part # Distributor Description Stock Price Buy
DISTI # 82C5195
Newark Transistor,igbt,n-Chan,600V V(Br)Ces,20A I(C),to-263Ab Rohs Compliant: Yes |Onsemi HGT1S20N60C3S9A Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
Rochester Electronics 45A, 600V, UFS Series N-Channel IGBT RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 2310
  • 1 $2.9600
  • 25 $2.9000
  • 100 $2.7800
  • 500 $2.6600
  • 1,000 $2.5200
$2.5200 / $2.9600 Buy Now

Part Details for HGT1S20N60C3S9A

HGT1S20N60C3S9A CAD Models

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HGT1S20N60C3S9A Part Data Attributes

HGT1S20N60C3S9A onsemi
Buy Now Datasheet
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HGT1S20N60C3S9A onsemi 45A, 600V, UFS Series N-Channel IGBT, 800-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 45 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 210 ns
Gate-Emitter Thr Voltage-Max 6.3 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 164 W
Qualification Status Not Qualified
Rise Time-Max (tr) 28 ns
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 660 ns
Turn-off Time-Nom (toff) 388 ns
Turn-on Time-Max (ton) 60 ns
Turn-on Time-Nom (ton) 52 ns
VCEsat-Max 1.8 V

Alternate Parts for HGT1S20N60C3S9A

This table gives cross-reference parts and alternative options found for HGT1S20N60C3S9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S20N60C3S9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S20N60C3S9A 45A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S20N60C3S9A vs HGT1S20N60C3S9A
HGT1S20N60C3S9A 45A, 600V, UFS Series N-Channel IGBT, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL Fairchild Semiconductor Corporation HGT1S20N60C3S9A vs HGT1S20N60C3S9A
Part Number Description Manufacturer Compare
HGT1S20N60C3S9A 45A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S20N60C3S9A vs HGT1S20N60C3S9A
HGT1S20N60C3S9A 45A, 600V, UFS Series N-Channel IGBT, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL Fairchild Semiconductor Corporation HGT1S20N60C3S9A vs HGT1S20N60C3S9A

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