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HGTD1N120BNS9A by:

5.3A, 1200V, N-CHANNEL IGBT, TO-252AA

Part Details for HGTD1N120BNS9A by Intersil Corporation

Overview of HGTD1N120BNS9A by Intersil Corporation

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Part Details for HGTD1N120BNS9A

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HGTD1N120BNS9A Part Data Attributes

HGTD1N120BNS9A Intersil Corporation
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HGTD1N120BNS9A Intersil Corporation 5.3A, 1200V, N-CHANNEL IGBT, TO-252AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 5.3 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 300 ns
Gate-Emitter Thr Voltage-Max 7.1 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Rise Time-Max (tr) 14 ns
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 293 ns
Turn-on Time-Nom (ton) 26 ns

Alternate Parts for HGTD1N120BNS9A

This table gives cross-reference parts and alternative options found for HGTD1N120BNS9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD1N120BNS9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTD1N120BNS9A IGBT, 1200V, NPT, 2500-REEL onsemi HGTD1N120BNS9A vs HGTD1N120BNS9A
HGTD1N120BNS9A Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation HGTD1N120BNS9A vs HGTD1N120BNS9A
Part Number Description Manufacturer Compare
HGTD1N120BNS9A Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation HGTD1N120BNS9A vs HGTD1N120BNS9A
HGTD1N120BNS9A IGBT, 1200V, NPT, 2500-REEL onsemi HGTD1N120BNS9A vs HGTD1N120BNS9A

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