Part Details for HGTD2N120BNS by Harris Semiconductor
Overview of HGTD2N120BNS by Harris Semiconductor
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- Part Data Attributes: (Available)
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Applications
Industrial Automation
Motor control systems
Part Details for HGTD2N120BNS
HGTD2N120BNS CAD Models
HGTD2N120BNS Part Data Attributes
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HGTD2N120BNS
Harris Semiconductor
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Datasheet
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HGTD2N120BNS
Harris Semiconductor
Insulated Gate Bipolar Transistor, 2A I(C), 1200V V(BR)CES, N-Channel, TO-252AA
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Collector Current-Max (IC) | 2 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON |