Part Details for HGTD8P50G1 by Harris Semiconductor
Overview of HGTD8P50G1 by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Security and Surveillance
Internet of Things (IoT)
Telecommunications
Communication and Networking
Price & Stock for HGTD8P50G1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGTD8P50G1-ND
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DigiKey | IGBT 500V 12A IPAK Min Qty: 211 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
23728 In Stock |
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$1.4200 | Buy Now |
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Rochester Electronics | 8A, 500V P-Channel IGBT RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 23728 |
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$1.2200 / $1.4300 | Buy Now |
Part Details for HGTD8P50G1
HGTD8P50G1 CAD Models
HGTD8P50G1 Part Data Attributes
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HGTD8P50G1
Harris Semiconductor
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Datasheet
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Compare Parts:
HGTD8P50G1
Harris Semiconductor
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-251AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 12 A | |
| Collector-Emitter Voltage-Max | 500 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 2500 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 66 W | |
| Power Dissipation-Max (Abs) | 66 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 680 ns | |
| Turn-off Time-Nom (toff) | 480 ns | |
| VCEsat-Max | 3.7 V |
Alternate Parts for HGTD8P50G1
This table gives cross-reference parts and alternative options found for HGTD8P50G1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD8P50G1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTD7N60C3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA | Harris Semiconductor | HGTD8P50G1 vs HGTD7N60C3 |
| HGTD7N60C3 | 14A, 600V, N-CHANNEL IGBT, TO-220AB | Intersil Corporation | HGTD8P50G1 vs HGTD7N60C3 |
| HGTD6N40E1 | Insulated Gate Bipolar Transistor, 7.5A I(C), 400V V(BR)CES, N-Channel, TO-251AA | Harris Semiconductor | HGTD8P50G1 vs HGTD6N40E1 |
| SGU06N60 | Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-251AA, PLASTIC, IPAK-3 | Infineon Technologies AG | HGTD8P50G1 vs SGU06N60 |
| HGTD7N60C3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Fairchild Semiconductor Corporation | HGTD8P50G1 vs HGTD7N60C3 |
| HGTD8P50G1S | 12A, 500V, P-CHANNEL IGBT, TO-252AA | Intersil Corporation | HGTD8P50G1 vs HGTD8P50G1S |