Datasheets
HGTG10N120BN by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247

Part Details for HGTG10N120BN by Harris Semiconductor

Overview of HGTG10N120BN by Harris Semiconductor

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Price & Stock for HGTG10N120BN

Part # Distributor Description Stock Price Buy
Bristol Electronics   65
RFQ
Quest Components   52
  • 1 $3.5840
  • 10 $2.2400
  • 34 $1.9712
$1.9712 / $3.5840 Buy Now

Part Details for HGTG10N120BN

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HGTG10N120BN Part Data Attributes

HGTG10N120BN Harris Semiconductor
Buy Now Datasheet
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HGTG10N120BN Harris Semiconductor Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
Part Life Cycle Code Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 190 ns
Turn-on Time-Nom (ton) 21 ns

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