Datasheets
HGTG30N60B3_NL by: Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Part Details for HGTG30N60B3_NL by Fairchild Semiconductor Corporation

Overview of HGTG30N60B3_NL by Fairchild Semiconductor Corporation

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Price & Stock for HGTG30N60B3_NL

Part # Distributor Description Stock Price Buy
DISTI # 2156-HGTG30N60B3_NL-ND
DigiKey IGBT, 60A, 600V, N-CHANNEL Min Qty: 51 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 51
In Stock
  • 51 $6.0400
$6.0400 Buy Now
Rochester Electronics Insulated Gate Bipolar Transistor, 60A, 600V, N-Channel, TO-247 ' RoHS: Compliant Status: Obsolete Min Qty: 1 51
  • 1 $6.1000
  • 25 $5.9800
  • 100 $5.7300
  • 500 $5.4900
  • 1,000 $5.1800
$5.1800 / $6.1000 Buy Now

Part Details for HGTG30N60B3_NL

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HGTG30N60B3_NL Part Data Attributes:

HGTG30N60B3_NL Fairchild Semiconductor Corporation
Buy Now Datasheet
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HGTG30N60B3_NL Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 150 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 365 ns
Turn-on Time-Nom (ton) 56 ns

Alternate Parts for HGTG30N60B3_NL

This table gives cross-reference parts and alternative options found for HGTG30N60B3_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG30N60B3_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG30N60B3 600V, N-CHANNEL IGBT, TO-247, PLASTIC PACKAGE-3 Intersil Corporation HGTG30N60B3_NL vs HGTG30N60B3
HGTG30N60B3 600V, PT IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL Fairchild Semiconductor Corporation HGTG30N60B3_NL vs HGTG30N60B3
HGTG30N60B3 IGBT, 600V, PT, 450-TUBE onsemi HGTG30N60B3_NL vs HGTG30N60B3
Part Number Description Manufacturer Compare
HGTP1N120CN Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGTG30N60B3_NL vs HGTP1N120CN
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc HGTG30N60B3_NL vs IXGH25N100U1
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc HGTG30N60B3_NL vs IXGH36N60A3D4
IRG4BC20W-STRLPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG HGTG30N60B3_NL vs IRG4BC20W-STRLPBF
IXGH35N120B Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG30N60B3_NL vs IXGH35N120B
IXDA20N120AS Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 IXYS Corporation HGTG30N60B3_NL vs IXDA20N120AS
SGW15N120 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG HGTG30N60B3_NL vs SGW15N120
IRG4BC20W-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG HGTG30N60B3_NL vs IRG4BC20W-S
APT45GL100BN 45A, 1000V, N-CHANNEL IGBT, TO-247 Microsemi Corporation HGTG30N60B3_NL vs APT45GL100BN
IXGH17N100 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG30N60B3_NL vs IXGH17N100

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