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1200V, NPT IGBT, 800-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98B1940
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Newark | Transistor,igbt,n-Chan,1.2Kv V(Br)Ces,17A I(C),to-220Ab Rohs Compliant: Yes |Onsemi HGTP10N120BN Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Chip 1 Exchange | INSTOCK | 5200 |
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RFQ |
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HGTP10N120BN
onsemi
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Datasheet
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Compare Parts:
HGTP10N120BN
onsemi
1200V, NPT IGBT, 800-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 35 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 200 ns | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 298 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 15 ns | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 450 ns | |
Turn-off Time-Nom (toff) | 330 ns | |
Turn-on Time-Max (ton) | 40 ns | |
Turn-on Time-Nom (ton) | 32 ns | |
VCEsat-Max | 4.2 V |
This table gives cross-reference parts and alternative options found for HGTP10N120BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP10N120BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGTG10N120BND_NL | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | HGTP10N120BN vs HGTG10N120BND_NL |
HGTG10N120BN | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | HGTP10N120BN vs HGTG10N120BN |
HGTG10N120BND | 35A, 1200V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGTP10N120BN vs HGTG10N120BND |
HGTG10N120BND | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247, | Fairchild Semiconductor Corporation | HGTP10N120BN vs HGTG10N120BND |
HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | HGTP10N120BN vs HGTG10N120BND |